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Influence of gamma radiation on the electrical properties of MnO and MnO/TeO 2 thin films
Author(s) -
Arshak K.,
Korostynska O.
Publication year - 2004
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200310059
Subject(s) - magnetoresistance , electrical resistivity and conductivity , materials science , condensed matter physics , magnetization , ferromagnetism , annealing (glass) , sputtering , polaron , thin film , colossal magnetoresistance , magnetic field , nanotechnology , physics , composite material , electron , quantum mechanics
The pure and mixed oxide materials, such as manganese oxide (MnO) and tellurium dioxide (TeO 2 ), in the form of thermally deposited thin films were studied in terms of their susceptibility to gamma radiation exposure. Radiation‐induced changes in their electrical properties indicated the level of radiation damage. These thin film devices showed increase in values of current by the increase in the radiation dose. The dose response was found to be composition‐ and thickness‐dependant.