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Making the transition temperature of cuprate superconductors higher by using the field‐effect‐transistor geometry
Author(s) -
Hayashi M.
Publication year - 2004
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200310048
Subject(s) - materials science , wurtzite crystal structure , ferroelectricity , condensed matter physics , sapphire , hysteresis , birefringence , heterojunction , polarization (electrochemistry) , phase transition , optoelectronics , transition temperature , superconductivity , laser , optics , dielectric , physics , chemistry , zinc , metallurgy
We present a possibility to raise the transition temperature of cuprate superconductors by using the field‐effect‐transistor type devices. The basic mechanism is based on the proximity effect of the two off‐diagonal‐long‐range‐orders in the superconducting phase of the cuprates, namely, the singlet resonating‐valence‐bond order and the bose condensation. Our model is based on the mean field theory of the t ‐ J model.