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Advances of pulsed laser deposition of ZnO thin films
Author(s) -
Lorenz M.,
Hochmuth H.,
SchmidtGrund R.,
Kaidashev E.M.,
Grundmann M.
Publication year - 2004
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200310046
Subject(s) - pulsed laser deposition , materials science , thin film , dopant , sapphire , doping , deposition (geology) , optoelectronics , pulsed laser , laser , nanotechnology , optics , paleontology , physics , sediment , biology
Abstract Advances in Pulsed Laser Deposition (PLD) equipment and process design for the epitaxy of ZnO thin films on a‐, and c‐oriented sapphire substrates are reported. The achieved improvement of device relevant ZnO layer properties is directly related to our equipment design and novel process schemes. First results on growth and reflectivity of ZnO‐MgO based dielectric Bragg resonators for future ZnO‐based light emitter devices are shown.

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