Premium
SrBi 2 Nb 2 O 9 thin films epitaxially grown on Pt epitaxial bottom layers: structural characteristics and nanoscale characterization of the ferroelectric behaviour by AFM
Author(s) -
Duclère J.R.,
GuillouxViry M.,
Bouquet V.,
Perrin A.,
Gautier B.
Publication year - 2004
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200310039
Subject(s) - materials science , epitaxy , electrode , nanoscopic scale , pmos logic , thin film , ferroelectricity , optoelectronics , work function , atmosphere (unit) , nanotechnology , voltage , transistor , layer (electronics) , electrical engineering , chemistry , physics , dielectric , engineering , thermodynamics
SrBi 2 Nb 2 O 9 (SBN) films were grown by pulsed laser deposition on (100) and (110) Pt epitaxial bottom layers. In both cases x‐ray diffraction evidenced the epitaxial growth of SBN in spite of the coexistence of mainly two orientations. SBN films on (100) Pt present usually a dominant (001) orientation with the (115) one. AFM piezoresponse images agree with the crystallographic data, i.e. only the (115) oriented grains show a piezoelectric contrast. The SBN films grown on (110) Pt lead to a more homogenous piezoresponse imaging, in agreement with the preferential (116) orientation and the microstructure.