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Kapitza phonon transmission from clean H‐silicon(111) surfaces into liquid helium
Author(s) -
Wichert K. H.,
Reimann C.,
Blahusch G.,
Kinder H.
Publication year - 1995
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19955070303
Subject(s) - transmission coefficient , phonon , transmission (telecommunications) , materials science , helium , liquid helium , atomic physics , silicon , sticking coefficient , condensed matter physics , molecular physics , optics , analytical chemistry (journal) , physics , optoelectronics , chemistry , desorption , adsorption , chromatography , electrical engineering , engineering
We have studied the phonon transmission from ultraclean Si(111) surfaces into liquid helium by the phonon pulse technique. Reflection experiments and angular resolving transmission experiments were performed to measure the absolute value of the transmission coefficient and its dependence on the phonon emission angle into the solid. Clean samples etched conventionally in dilute HF show a significant anomalous transmission. An additional etch step in highly buffered HF (i.e., NH 4 F) with a pH‐value of 7.8 reduces the transmission coefficient drastically. Local inhomogeneities of the transmission coefficient caused by the deposition of water molecules on the surface could be visualized by the enhanced transmission. We found that the observed anomalous transmission is caused by mass defects.