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Discrete resistance fluctuations in pressure‐type point contacts
Author(s) -
Kokkedee J. A.,
Thier C.,
Jansen A. G. M.
Publication year - 1993
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19935050702
Subject(s) - ohmic contact , electromigration , materials science , condensed matter physics , scattering , metal , crystallographic defect , contact resistance , type (biology) , electrical resistance and conductance , point (geometry) , physics , nanotechnology , optics , composite material , layer (electronics) , metallurgy , biology , ecology , geometry , mathematics
In high ohmic pressure‐type metallic point contacts (resistance range 50 Ω to 3 k Ω) the point‐contact resistance is observed to switch randomly between two or more discrete levels. This effect can be explained by the motion or reorientation of single defects, thereby changing their cross section for electron scattering. From the temperature‐ and voltage‐dependence of the characteristic times of the fluctuations, electromigration parameters for a defect in silver are extracted.