Metastable phase formation and structural change characteristics of vapor deposited semiconductor films | Zendy

Fuxi Gan | Zendy; Songsheng Xue | Zendy; Zhengxiu Fan | Zendy

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Metastable phase formation and structural change characteristics of vapor deposited semiconductor films

Author(s) -

Fuxi Gan,

Songsheng Xue,

Zhengxiu Fan

Publication year - 1992

Publication title -

annalen der physik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.009

H-Index - 68

eISSN - 1521-3889

pISSN - 0003-3804

DOI - 10.1002/andp.19925040602

Subject(s) - metastability , materials science , phase (matter) , amorphous solid , semiconductor , thin film , amorphous semiconductors , sputter deposition , sputtering , phase change , laser , optoelectronics , chemical physics , optics , nanotechnology , crystallography , thermodynamics , chemistry , physics , organic chemistry

Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb 2 Te 4 thin films prepared by RF‐magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast structural phase transformation.

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