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Metastable phase formation and structural change characteristics of vapor deposited semiconductor films
Author(s) -
Fuxi Gan,
Songsheng Xue,
Zhengxiu Fan
Publication year - 1992
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19925040602
Subject(s) - metastability , materials science , phase (matter) , amorphous solid , semiconductor , thin film , amorphous semiconductors , sputter deposition , sputtering , phase change , laser , optoelectronics , chemical physics , optics , nanotechnology , crystallography , thermodynamics , chemistry , physics , organic chemistry
Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb 2 Te 4 thin films prepared by RF‐magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast structural phase transformation.