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Temperature dependence of band gaps in Si and Ge in the quasi‐ion model
Author(s) -
Klenner M.,
Falter C.,
Ludwig W.
Publication year - 1992
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19925040107
Subject(s) - germanium , ion , phonon , condensed matter physics , silicon , band gap , direct and indirect band gaps , materials science , physics , eigenvalues and eigenvectors , atomic physics , quantum mechanics , optoelectronics
We have calculated the temperature dependence of the direct and indirect band gaps in silicon and germanium. The electron‐phonon potential as well as the phonon frequencies and eigenvectors are calculated consistently within the rigid quasi‐ion model. Comparison is made with experiment and with the theoretical results of Allen and Cardona and Lautenschlager et al.