Metal‐insulator transition in Bi‐doped, amorphous Ga:Ar mixtures: Influence of spin‐orbit scattering | Zendy

Bögershausen M. | Zendy; Micklitz H. | Zendy

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Metal‐insulator transition in Bi‐doped, amorphous Ga:Ar mixtures: Influence of spin‐orbit scattering

Author(s) -

Bögershausen M.,

Micklitz H.

Publication year - 1992

Publication title -

annalen der physik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.009

H-Index - 68

eISSN - 1521-3889

pISSN - 0003-3804

DOI - 10.1002/andp.19925040104

Subject(s) - materials science , amorphous solid , doping , metal , electrical resistivity and conductivity , metal–insulator transition , analytical chemistry (journal) , condensed matter physics , scattering , transition metal , critical exponent , hall effect , volume fraction , crystallography , physics , phase transition , chemistry , optics , metallurgy , biochemistry , chromatography , quantum mechanics , composite material , catalysis

Doping amorphous Ga x Ar 1−x mixtures with the strong spin‐orbit scatterer Bi has a dramatic effect on the metal‐insulator transition (MIT) occurring in this system at a critical metal atomic concentration x c : (i) the MIT is shifted from x ′ c = 0.36 ± 0.01 (corresponding to a critical metal volume fraction v ′ c = 0.19 ± 0.01) of the undoped system to a lower value of x c = 0.25 ± 0.01 ( v c = 0.14 ± 0.01) for (Ga 0.9 Bi 0.1 ) x Ar 1−x and (ii) the critical exponent v and g of the dc conductivity and Hall coefficient, respectively, change from v ′ = 0.5 ± 0.1 and g ′ = 0 for the undoped samples to v = 1.3 ± 0.3 and g = 0.5 ± 0.1 for (Ga 0.9 Bi 0.1 ) x Ar 1−x .

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