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Theoretical Analysis of the Einstein Relation in n ‐Channel Inversion Layers on A 3 II B 2 V Semiconductors under Magnetic Quantization
Author(s) -
Ghatak K. P.,
Mitra B.,
Mondal M.
Publication year - 1991
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19915030406
Subject(s) - einstein relation , physics , frame work , dispersion relation , degenerate energy levels , semiconductor , condensed matter physics , einstein , quantum mechanics , anisotropy , electronic band structure , mathematical physics , theoretical physics , metric (unit) , operations management , economics
We have investigated the Einstein relation in n ‐channel inversion layers on A 3 II B 2 V semiconductors at low temperatures on the basis of a newly derived dispersion relation of the carriers under arbitrary magnetic quantization for the general case which occurs from the consideration of the anisotropies of the band parameters within the frame work of k · p formalism. It is found by incorporating both the effects of electron spin and broadening of Landau levels, using n ‐Cd 3 As 2 as an example, that the theoretical formulation is in qualitative agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion law. In addition, the corresponding well‐known results for bulk specimens of two band Kane model both in the presence and absence of magnetic quantization, are also obtained from the generalized expressions as special cases.