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Time‐Dependent Photoconductivity in Semi‐Insulating Gallium‐Arsenide
Author(s) -
Queisser Hans J.
Publication year - 1990
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19905020604
Subject(s) - photoconductivity , classification of discontinuities , condensed matter physics , materials science , gallium arsenide , exciton , time constant , polarization (electrochemistry) , space charge , optoelectronics , electric field , physics , electron , chemistry , quantum mechanics , electrical engineering , mathematical analysis , mathematics , engineering
Abstract An alternative interpretation is offered to explain a photoconductivity, rising exponentially with time under constant illumination, which has been detected in semiinsulating GaAs. Spatial inhomogeneities, caused by nonuniform defect density, present potential barriers to current flow. Illumination neutralizes the space charge, thus reduces these barriers, hence increases current at constant bias. Local electric fields consequently vary in time, which may establish polarization effects and lifetime discontinuities via exciton dissociation.