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On the Einstein Relation in Ternary Semiconductors in the Presence of Crossed Electric and Magnetic Fields
Author(s) -
Mondal M.,
Ghatak K. P.
Publication year - 1989
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19895010703
Subject(s) - einstein relation , ternary operation , condensed matter physics , einstein , magnetic field , electron , semiconductor , electric field , physics , alloy , thermal diffusivity , materials science , thermodynamics , quantum mechanics , metric (unit) , operations management , computer science , economics , programming language , composite material
We investigate theoretically the Einstein relation for the diffusivity‐mobility ratio of the electrons in ternary semiconductors at low temperatures in the presence of crossed electric and quantizing magnetic fields on the basis of threeband Kane model. It is found, taking n‐Hg 1‐ x Cd x Te as an example, that DMR shows an oscillatory magnetic field dependence. Besides, the DMR increase both with increasing electron concentration and decreasing alloy composition respectively.