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The Positron as a Probe for Studying Bulk and Defect Properties in Semiconductors
Author(s) -
Dlubek G.,
Brümmer O.
Publication year - 1986
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19864980309
Subject(s) - semiconductor , positron , materials science , condensed matter physics , engineering physics , physics , nuclear physics , optoelectronics , electron
Abstract Positron lifetime measurements are used to study various doped and undoped III–V compound semiconductors like GaAs, GaP, InAs and InP. In some as‐grown crystals native vacancies (V As 0 , V P 0 ) or their complexes with dopants (Te As V Ga − , V P Zn In V P 0 ) are detected with maximum concentrations of a few 10 18 cm −3 . In undoped GaAs neutral As vacancies V As 0are identified, the concentration of which varies locally. The vacancies have their origin in deviations from the stoichiometrie composition of the compound. They disappear at 500°C. At this temperature defects created by irradiation with fast neutrons anneal also out. The relation between the bulk positron lifetime and the density and polarization of valence electrons is analyzed. Further, the potential of the positron annihilation method in identifying and characterizing vacancy‐type defects in semiconductors is discussed.