Premium
Photo‐Induced Metastable Effects in Hydrogenated Amorphous Silicon (a‐Si:H)
Author(s) -
Fuhs W.,
Mell H.,
Stuke J.,
Thomas P.,
Weiser G.
Publication year - 1985
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19854970213
Subject(s) - dangling bond , metastability , amorphous silicon , materials science , silicon , recombination , density of states , condensed matter physics , atomic physics , optoelectronics , chemical physics , molecular physics , crystalline silicon , chemistry , physics , biochemistry , organic chemistry , gene
Light induced changes of electronic properties are studied in glow discharge deposited a‐Si: H‐films by ESR, field effect, DLTS and electronic transport. These effects are caused by silicon dangling bonds generated by recombination processes, which raise the density of states near midgap. The concomitant increase of potential fluctuations indicates that these defects are inhomogeneously distributed.