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Absorptionsbedingte Phasenselektion der Strahlung modulierter GaAs‐Lumineszenzdioden vom F abry ‐P erot ‐Typ
Author(s) -
Zehe A.
Publication year - 1973
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19730290102
Subject(s) - physics , diode , optics , phase (matter) , laser , diffusion , atomic physics , transverse plane , charge carrier , recombination , absorption (acoustics) , optoelectronics , biochemistry , chemistry , structural engineering , quantum mechanics , gene , thermodynamics , engineering
Incorporating the dependence on transverse position co‐ordinate x of both recombination and optical absorption in a light emitting diode (LED) with laser structure, a theoretical study has been made of phase relations between a sinusoidal driving current and the light output. The theory yields a phase variation with x accordant to a carrier‐diffusion controlled recombination wave, including the diode transient behavior due to charge storage. The phase selection by an appropriate absorption profile transverse to the recombination region is found to be of extraordinary importance for the bowing of the optical wave front at the radiating area.