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Optische Übergänge in hochdotierten und gemischten Halbleitern: Die verallgemeinerte Bloch‐Matrix
Author(s) -
Unger K.
Publication year - 1971
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.19714820206
Subject(s) - generalization , physics , bloch wave , degeneracy (biology) , semiconductor , quantum mechanics , perturbation theory (quantum mechanics) , conduction band , condensed matter physics , quantum , mathematical physics , mathematics , mathematical analysis , electron , bioinformatics , biology
To treat fluctuating perturbation potentials in semiconductors, it is necessary to take quantum corrections to the Thomas‐Fermi approximation into account. A generalization of the Bloch matrix, valid for arbitrary degrees of degeneracy, is used to handle these quantum corrections. The generalized Bloch equation and the results of a treatment of optical transitions in high‐doped semiconductors with this method are given. The concept of effective band edges is shown to be useful for the problem on hand.