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New π‐Extended Naphthalene Diimides for High‐Performance n‐Type Organic Semiconductors with NIR Absorption Properties
Author(s) -
Wu Wenting,
Zhao Zheng,
Li Jing,
Chen Ming,
Gao Xike
Publication year - 2018
Publication title -
asian journal of organic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.846
H-Index - 44
eISSN - 2193-5815
pISSN - 2193-5807
DOI - 10.1002/ajoc.201800443
Subject(s) - chemistry , organic semiconductor , naphthalene , absorption (acoustics) , acetonitrile , semiconductor , diimide , photochemistry , optoelectronics , organic chemistry , molecule , materials science , perylene , composite material
Three π‐extended naphthalene diimide (NDI) derivatives, where the conjugated scaffold, NDI core fused with 2‐(1,3‐dithiol‐2‐ylidene) acetonitrile moieties was laterally extended by using bicyclic aromatics, namely benzo [ b ] thiophen‐2‐yl group, naphthalen‐2‐yl group, and azulen‐2‐yl group, were explored to acquire high‐performance near‐infrared (NIR) organic semiconductors. It is because of such an extended conjugation that these compounds display remarkable absorption bands even extending to the NIR region with the absorption cutoffs of up to 920 nm. Pure electron‐transporting characteristics of these diimides are characterized by the fabrication of their organic thin film transistor (OTFT) devices. The high electron mobilities of up to 0.37 cm 2 V −1 s −1 coupled with NIR‐absorbing properties make them promising n‐type organic semiconductors.