Open AccessUltrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic
Author(s) -
Pu Yuchen,
Lu Ziyao,
Mou Hongming,
Zhang Xixiang,
Zhang Xiaozhong
Publication year - 2022
Publication title -
advanced intelligent systems
Language(s) - English
Resource type - Journals
ISSN - 2640-4567
DOI - 10.1002/aisy.202100157
Subject(s) - adder , logic gate , pass transistor logic , cmos , and or invert , logic family , computer science , voltage , bottleneck , xor gate , electronic engineering , power consumption , logic level , electrical engineering , power (physics) , logic synthesis , engineering , embedded system , physics , transistor , quantum mechanics
To solve the von Neumann performance bottleneck, many kinds of magnetic logic devices are proposed. However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal−oxide−semiconductor (CMOS) logic, and moreover, cascading of the devices is difficult. Herein, instead, a new voltage‐dominated magnetic logic‐memory device is proposed, with switching time of 300 ps and power consumption of 150 fJ, representing ≈10 times improvement compared with CMOS logic on the same scale. The device has a reliable output ratio of >3000%, a low working magnetic field of <10 mT, and a low error rate of ≈10 −7 . Moreover, complex logic operations, such as XOR gates and a full adder, can be realized using this device via cascading. As a result of these advantages, the magnetic logic‐memory device is well suited for practical applications.