Open AccessRecent Advances in Flexible Field‐Effect Transistors toward Wearable Sensors
Author(s) -
Li Ming-Zheng,
Han Su-Ting,
Zhou Ye
Publication year - 2020
Publication title -
advanced intelligent systems
Language(s) - English
Resource type - Journals
ISSN - 2640-4567
DOI - 10.1002/aisy.202000113
Subject(s) - wearable computer , wearable technology , transistor , field (mathematics) , computer science , internet of things , pressure sensor , field effect transistor , variety (cybernetics) , electrical engineering , nanotechnology , engineering , materials science , embedded system , mechanical engineering , voltage , artificial intelligence , mathematics , pure mathematics
The introduction of the “Internet of Things” (IoTs) concept has spawned a series of research and development of wearable sensors. Flexible field‐effect transistors (FETs) are considered to be potential sensing devices due to the variety of material utilization and the self‐amplifying function on electrical signals. FETs have demonstrated the ability of detecting different kinds of external stimuli and continuous monitoring functionalities. Herein, the recent progress achieved by the academia in wearable sensors based on flexible FETs, including pressure, temperature, chemical, and biological analytes, which are vital for the manufacturing of smart wearable devices, is summarized. The sensing mechanism for different sensors is introduced and an in‐depth discussion is presented, including material engineering, problems at the current stage, and future challenges.