Open AccessStretchable and Wearable Resistive Switching Random‐Access Memory
Author(s) -
Shi Qiuwei,
Wang Jiangxin,
Aziz Izzat,
Lee Pooi See
Publication year - 2020
Publication title -
advanced intelligent systems
Language(s) - English
Resource type - Journals
ISSN - 2640-4567
DOI - 10.1002/aisy.202000007
Subject(s) - resistive random access memory , wearable computer , wearable technology , computer science , computer data storage , random access , stretchable electronics , big data , electronics , computer hardware , embedded system , electrical engineering , engineering , operating system , voltage
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in storage and processing at any time. This propounds a strong demand for the stretchable and wearable memory devices with ultrafast switching, high density, and high energy efficiency. Herein, an overview of the advanced progresses made on developing stretchable resistive switching random‐access memory (RRAM) is presented, concentrating on the fundamental components, materials selection principles, and configuration design strategies. The basic electrical and mechanical properties of stretchable components to meet the functionality of memory storage are summarized. Novel materials with the intrinsically stretchable features toward the realization of stretchable RRAM are discussed. Ingenious configuration design strategies to obtain stretchable RRAM are evaluated. Finally, the challenges and perspectives for the practical applications of stretchable RRAM are also addressed. Some helpful guidelines are provided in promoting the development on stretchable and wearable RRAM for making deployable and portable artificial intelligence and smart devices.