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Electron Emission Devices for Energy‐Efficient Systems
Author(s) -
Nirantar Shruti,
Ahmed Taimur,
Bhaskaran Madhu,
Han Jin-Woo,
Walia Sumeet,
Sriram Sharath
Publication year - 2019
Publication title -
advanced intelligent systems
Language(s) - English
Resource type - Journals
ISSN - 2640-4567
DOI - 10.1002/aisy.201970040
Subject(s) - transistor , optoelectronics , electron , materials science , engineering physics , field electron emission , field effect transistor , electrical engineering , nanotechnology , engineering , physics , nuclear physics , voltage
Electron emission devices have seen a recent resurgence due to their ability to operate in air, without vacuum encapsulation. The cover illustration shows the evolution of vacuum and air‐channel transistor designs from the conventional Spindt structure to reimagined field effect transistor structures, providing the combined advantages of low cost, small size, and superior carrier transport, as reviewed in article number 1900039 by Shruti Nirantar, Sharath Sriram, and co‐workers.

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