
Two‐Dimensional Conjugated Microporous Polymer with Structural Stability and Electrical Bistability for Rectifying Memory Array
Author(s) -
Liu Zhengdong,
Yin Yuhang,
Wang Xiangjing,
Ju Shang,
Song Mengya,
Zhou Zhe,
Wang Xiaojing,
Cheng Shuai,
Zhang Zepu,
Liu Juqing,
Huang Wei
Publication year - 2019
Publication title -
advanced intelligent systems
Language(s) - English
Resource type - Journals
ISSN - 2640-4567
DOI - 10.1002/aisy.201900052
Subject(s) - materials science , crossbar switch , conjugated microporous polymer , bistability , stacking , polymer , optoelectronics , nanotechnology , diode , non volatile memory , coating , resistive random access memory , conjugated system , microporous material , voltage , computer science , electrical engineering , chemistry , composite material , telecommunications , organic chemistry , engineering
Rectifying memory is an effective strategy to solve the cross‐talk issues of crossbar switch architecture during the integration procedure for high‐density data storage. Herein, a two‐dimensional (2D) conjugated microporous polymer (CMP) is proposed as an ideal resistive switching medium for integrated rectifying memory devices. Large‐area 2D CMP film is prepared using a surface‐confined polymerization method, featuring rewritable nonvolatile memory with a low set voltage in a graphene/CMP/metal diode. Importantly, this film exhibits outstanding structural stability during solvent immersion and other polymer coating, being suitable for solution‐processed multilayer polymer electronics. By directly stacking the CMP memristor with a poly(3‐hexylthiophene) rectifier, the integrated multilayer device shows desirable rectifying memory effect, effectively reducing the misreading issue induced by the cross‐talk in a crossbar array.