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Growth behavior of pulsed‐laser‐deposited PLZTO thin films
Author(s) -
Tseng TzuFeng,
Liu KuoShung,
Lin INan,
Wang JyhPing,
Ling YongChien
Publication year - 1997
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.690431335
Subject(s) - thin film , analytical chemistry (journal) , substrate (aquarium) , pulsed laser deposition , materials science , ferroelectricity , layer (electronics) , dielectric , oxygen , polarization (electrochemistry) , chemistry , composite material , optoelectronics , nanotechnology , oceanography , organic chemistry , chromatography , geology
Elemental depth profile examined using secondary‐ion mass spectroscopy and structural profile examined using grazing‐incident X‐ray diffractometry were applied to analyze the growth behavior of Pb 1–x La x (Zr y Ti 1–y )O 3 (PLZTO) and Pb 1–x La x TiO 3 (PLTO) thin films deposited on a Si substrate. When deposited under a suitably high substrate temperature, the chamber's oxygen pressure was observed to substantially influence the structure of the films. Low oxygen pressures (P O 2< 0.01 mbar) deteriorate crystal structure without altering the composition of the films. Deposition of a buffer layer enhanced the formation kinetics of PLZTO and PLTO films. However, sufficiently thick SrTiO 3 (∼500 nm) layer was required to achieve this effect. Using (La 0.5 Sr 0.5 )CoO 3 /Pt materials as double‐layer electrodes not only prevented the film‐to‐substrate interaction, but resulted in preferentially oriented thin films. Ferroelectric properties of the films were thus greatly improved, with remanent polarization (Pr) around 14 ∼ 16 μC/cm 2 , coercive force (Ec) around 50 ∼ 60 kV/cm, and relative dielectric constant (ε) around 900 ∼ 1,000.