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High‐temperature kinetics of Si‐containing precursors for ceramic processing
Author(s) -
Woiki D.,
Catoire L.,
Roth P.
Publication year - 1997
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.690431311
Subject(s) - kinetics , chemistry , ceramic , shock tube , atmospheric temperature range , chemical kinetics , pyrolysis , flash photolysis , dilution , analytical chemistry (journal) , argon , shock wave , chemical engineering , reaction rate constant , thermodynamics , organic chemistry , physics , quantum mechanics , engineering
Abstract Experimental investigations of high‐temperature kinetics of Si‐precursor molecules relevant to CVD and ceramic processing are described. Reaction systems using SiH 4 , Si 2 H 6 , and SiCl 4 highly diluted in argon were studied in a shock tube, a high‐temperature wave reactor, by monitoring in situ the concentrations of atomic or radical reactants Si, H, Cl, SiH, and SiH 2 . Because of the very high dilution, the measured properties are sensitive to a limited number of elementary reactions, allowing a relatively direct determination of the respective rate coefficients. Both thermal pyrolysis and laser flash photolysis methods were used to expand the investigated temperature range. An overview of the bimolecular Si‐atom reactions is given.