Premium
Mercury‐sensitized photochemical vapor deposition of amorphous silicon
Author(s) -
Albright D. E.,
Saxe.,
Fortmann C. M.,
Rocheleau R. E.,
Russell T. W. F.
Publication year - 1990
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.690361011
Subject(s) - amorphous silicon , mercury (programming language) , mercury vapor lamp , chemical vapor deposition , deposition (geology) , silicon , radical , amorphous solid , chemistry , chemical engineering , hydrogen , materials science , photochemistry , nanotechnology , crystalline silicon , optoelectronics , organic chemistry , paleontology , sediment , computer science , engineering , biology , programming language
A reaction engineering model has been developed to describe the mercury‐sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a‐Si:H) semiconductor thin films. Model equations governing the gas‐phase generation, transport, and surface reactions of SiH 3 and H film precursor radicals are solved to predict film growth rate and bonded hydrogen content. Behavior of the model has been studied as a function of deposition conditions (pressure, temperature, feed composition, and flow rates) and has been verified by comparison with experimental results.