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Modeling of additive effects on the electroplating of a through‐hole
Author(s) -
Hazlebeck David A.,
Talbot Jan B.
Publication year - 1990
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.690360804
Subject(s) - electroplating , plating (geology) , electrolyte , kinetics , electrochemistry , dissociation (chemistry) , chemistry , deposition (geology) , copper plating , adsorption , copper , inorganic chemistry , ion , membrane , chemical engineering , thermodynamics , electrode , organic chemistry , physics , paleontology , biochemistry , layer (electronics) , quantum mechanics , sediment , geophysics , engineering , biology
A mathematical model of copper plating of a through‐hole is developed which relates uniformity of deposition to bulk electrolyte composition, applied potential difference, aspect ratio, through‐hole diameter, and deposition kinetics. The electrochemical transport equations governing plating in a through‐hole are solved assuming that the fluid within the through‐hole is stagnant. Conditions for uniform plating are determined both for Butler‐Volmer kinetics considering the effects of dissociation of bisulfate ions in the electrolytic solution and for kinetics limited by complexation of cupric ions with an adsorbed neutral additive species.