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RF plasma synthesis of amorphous AIN powder and films
Author(s) -
David M.,
Babu S. V.,
Rasmussen D. H.
Publication year - 1990
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.690360608
Subject(s) - amorphous solid , materials science , analytical chemistry (journal) , deposition (geology) , impurity , particle (ecology) , thin film , particle size , scanning electron microscope , nitride , chemical engineering , crystallography , chemistry , composite material , nanotechnology , organic chemistry , layer (electronics) , paleontology , oceanography , sediment , engineering , biology , geology
Amorphous powder and thin films of aluminum nitride (AIN) are deposited in a parallel‐plate RF plasma reactor starting from trimethylaluminum (TMA) and ammonia. Film deposition is favored at lower pressures and NH 3 /TMA ratios; particle deposition occurs under higher pressures and NH 3 /TMA ratios. Electron microscopy, x‐ray diffraction, IR spectroscopy, and UV reflectance measurements are used for product characterization. Films of AIN grown at 250°C are transparent, pure, and have high UV reflectivity. AIN powder is amorphous and has a particle size of 10–20 nm and surface area of about 85 m 2 /g. Amine impurities present in the as‐deposited powder are removed by heat treatment at 600°C. The IR spectra of as‐deposited powders do not show the characteristic Al‐O bonding peak found in powders deposited by other methods.