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Theory of transport processes in single crystal growth from the melt
Author(s) -
Brown Robert A.
Publication year - 1988
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.690340602
Subject(s) - crystal growth , mass transfer , coupling (piping) , semiconductor , crystal (programming language) , materials science , heat transfer , melt flow index , flow (mathematics) , mass transport , heat flow , chemical physics , chemistry , mechanics , thermodynamics , engineering physics , computer science , crystallography , polymer , optoelectronics , physics , metallurgy , thermal , copolymer , programming language , composite material
The quality of large semiconductor crystals grown from the melt for use in electronic and optoelectronic devices is strongly influenced by the intricate coupling of heat and mass transfer and melt flow in growth systems. This paper reviews the present state of understanding of these processes starting from the simplest descriptions of solidification processes to detailed numerical calculations needed for quantitative modeling of processing with solidification. Descriptions of models for the vertical Bridgman‐Stockbarger and Czochralski crystal growth techniques are included as examples of the level of understanding of industrially important methods.