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Undulating topography of HfO 2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide
Author(s) -
Li Kejing,
Zhang Lin,
Dixon David A.,
Klein Tonya M.
Publication year - 2011
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.12504
Subject(s) - borosilicate glass , mesoscale meteorology , buoyancy , hafnium , substrate (aquarium) , materials science , chemical vapor deposition , thin film , volumetric flow rate , deposition (geology) , flow (mathematics) , surface finish , surface roughness , analytical chemistry (journal) , chemical engineering , composite material , chemistry , nanotechnology , thermodynamics , geology , mechanics , metallurgy , sediment , zirconium , climatology , engineering , paleontology , oceanography , physics , chromatography
HfO 2 was deposited by chemical vapor deposition on Si, native SiO 2 , and borosilicate glass surfaces using hafnium (IV) tert butoxide in a mesoscale flow reactor. Undulating thin film topographies were observed by atomic force microscopy on all substrates with peak‐to‐peak periods between 10 and 25 nm in the presence of a temperature gradient perpendicular to flow of 25°C/mm. A computational fluid dynamic model suggests the phenomenon originates from buoyancy driven roll type flow. The thickness uniformity and roughness of the films depended on the flow rate, reactor temperature, and the substrate type. © 2011 American Institute of Chemical Engineers AIChE J, 2011