Premium
Directed self‐assembly by photostimulation of an amorphous semiconductor surface
Author(s) -
Kondratenko Yevgeniy V.,
Seebauer Edmund G.
Publication year - 2010
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.12229
Subject(s) - photostimulation , amorphous solid , amorphous silicon , amorphous semiconductors , materials science , nanoscopic scale , nanotechnology , semiconductor , crystallization , silicon , optoelectronics , chemical engineering , chemistry , crystalline silicon , engineering , crystallography , biochemistry
A method for nanoscale directed self‐assembly is demonstrated that employs an amorphous semiconductor containing subcritical nuclei for crystallization. This strategy combines attractive features of top‐down and bottom‐up approaches by exploiting the self‐organization capabilities latent in amorphous materials, but in a way that can be controlled by optical or electron beam exposure tools. The method was demonstrated with amorphous TiO 2 deposited on silicon, heated to 270°C, and exposed to low‐level ultraviolet light. © 2010 American Institute of Chemical Engineers AIChE J, 2010