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Kinetic investigation of chemical vapor deposition of B 4 C on tungsten substrate
Author(s) -
Karaman Mustafa,
Sezgi N. Aslı,
Doğu Timur,
Özbelge H. Önder
Publication year - 2006
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.11017
Subject(s) - boron carbide , boron trichloride , chemical vapor deposition , boron , tungsten , substrate (aquarium) , methane , mass fraction , materials science , tungsten carbide , mole fraction , chemistry , analytical chemistry (journal) , chemical engineering , metallurgy , organic chemistry , nanotechnology , composite material , oceanography , geology , engineering
Production of β‐rhombohedral boron carbide (B 4 C) on a tungsten substrate by the chemical vapor deposition from a BCl 3 –H 2 –CH 4 gas mixture was achieved. An impinging‐jet reactor was used to minimize the mass‐transfer limitations on the reaction kinetics, which made a detailed kinetic investigation possible. Results of the XRD and XPS analyses showed that the solid product formed on the substrate is a rhombohedral B 4 C phase. Both dichloroborane and boron carbide formation rates were found to increase with an increase in the inlet molar fraction of BCl 3 . The formation rate of boron carbide increased with an increase in the inlet molar fraction of CH 4 . However, no effect on the formation rate of dichloroborane was observed with an increase in the inlet molar fraction of methane. The activation energy of the boron carbide formation reaction was ascertained to be 56.1 ± 4.0 kJ/mol. The boron carbide formation reaction was proportional with the 0.34 ± 0.055 power of the initial boron trichloride concentration and 0.64 ± 0.084 power of the initial methane concentration. © 2006 American Institute of Chemical Engineers AIChE J, 2006