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Removal of moisture contamination from porous polymeric low‐k dielectric films
Author(s) -
Iqbal Asad,
Juneja Harpreet,
Yao Junpin,
Shadman Farhang
Publication year - 2006
Publication title -
aiche journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.958
H-Index - 167
eISSN - 1547-5905
pISSN - 0001-1541
DOI - 10.1002/aic.10760
Subject(s) - outgassing , moisture , dielectric , contamination , microelectronics , materials science , porosity , contamination control , chemical engineering , low k dielectric , porous medium , composite material , analytical chemistry (journal) , nanotechnology , chemistry , environmental chemistry , organic chemistry , optoelectronics , ecology , engineering , biology
Ultra low‐k dielectrics are expected to replace SiO 2 as the interlayer dielectric for the next‐generation microelectronic devices. A challenge facing the integration of these dielectrics in manufacturing is their interactions with gaseous contaminants, such as moisture, and the resulting change in their properties. The physical and chemical interactions of moisture with porous spin‐on dielectric material are investigated using temperature‐ and concentration‐programmed exposure and purge sequence together with trace moisture analysis, using atmospheric pressure ionization mass spectrometry. The model compound in this study is methylsilsesquioxane, deposited and treated under typical manufacturing conditions. A process model is developed that provides information on the mechanism and kinetics of moisture uptake and release in thin porous films. The model elucidates the effect of film properties on the contamination uptake as well as outgassing; it also provides a valuable tool for designing an optimum process for contamination control and removal in porous films. © 2006 American Institute of Chemical Engineers AIChE J, 2006