Open AccessChemical Bath Deposition of NiO x ‐NiSO 4 Heterostructured Hole Transport Layer for Perovskite Solar Cells
Author(s) -
Shen Benben,
Chen Mengjiong,
Zhang Fan,
Liu Da,
Liu Xinyi,
Xie Jin,
Yang Shuang,
Hou Yu,
Yang Hua Gui
Publication year - 2022
Publication title -
advanced energy and sustainability research
Language(s) - English
Resource type - Journals
ISSN - 2699-9412
DOI - 10.1002/aesr.202200055
Subject(s) - non blocking i/o , perovskite (structure) , chemical bath deposition , materials science , energy conversion efficiency , photovoltaics , fabrication , layer (electronics) , deposition (geology) , optoelectronics , thin film , chemical engineering , nanotechnology , photovoltaic system , chemistry , catalysis , geology , medicine , ecology , paleontology , biochemistry , alternative medicine , pathology , sediment , engineering , biology
Herein, the scalable chemical bath deposited NiO x ‐NiSO 4 heterostructured films are reported as the efficient hole transport layers (HTLs) in perovskite solar cells. The NiO x ‐NiSO 4 films show excellent hole extraction ability and reduce interfacial charge recombination in solar cell devices. By using NiO x ‐NiSO 4 HTLs, a high power conversion efficiency of 20.55% is obtained, which is about 12.23% greater than that of the pure NiO x transport layer. This study provides a simple solution‐processing route toward the large‐area production and fabrication of full inorganic transport layers for perovskite photovoltaics.