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Toward Simultaneous Achievement of Outstanding Durability and Photoelectrochemical Reaction in Cu 2 O Photocathodes via Electrochemically Designed Resistive Switching (Adv. Energy Mater. 39/2021)
Author(s) -
Kim Dong Su,
Kim Young Been,
Choi Ji Hoon,
Suh Hee Won,
Lee Hak Hyeon,
Lee Kun Woong,
Jung Sung Hyeon,
Kim Jeong Jae,
Deshpande Nishad G.,
Cho Hyung Koun
Publication year - 2021
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.202170152
Subject(s) - photocurrent , materials science , resistive touchscreen , electrochemistry , protein filament , optoelectronics , nanotechnology , photoelectrochemistry , metal insulator metal , resistive random access memory , metal , electrode , voltage , electrical engineering , composite material , capacitor , physics , engineering , quantum mechanics , metallurgy
Resistive Switching In article number 2101905, Hyung Koun Cho and co‐workers solve the trade‐off issue between photo‐charge transport and stability originating from the use of insulating protection layers. The electrochemical forming process suggested for the TiO 2 protection layer on photocathodes draws inspiration from typical resistive switching behaviors in resistive‐type memory with metal/insulator/metal (MIM) structures. From the electrochemical filament forming process and selective Pt‐photoelectrodeposition on filaments, the Cu 2 O/AZO/TiO 2 photocathodes exhibit an unprecedented photocurrent density and open‐circuit potential and produce vigorous hydrogen and oxygen evolution.