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Dopant‐Free Hole‐Transporting Material with Enhanced Intermolecular Interaction for Efficient and Stable n‐i‐p Perovskite Solar Cells
Author(s) -
Wang Jing,
Wu Xin,
Liu Yizhe,
Qin Tian,
Zhang Kaicheng,
Li Ning,
Zhao Juan,
Ye Ruquan,
Fan Zhanxi,
Chi Zhenguo,
Zhu Zonglong
Publication year - 2021
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.202100967
Subject(s) - materials science , dopant , perovskite (structure) , passivation , photocurrent , energy conversion efficiency , hysteresis , optoelectronics , nanotechnology , chemical engineering , doping , layer (electronics) , engineering , physics , quantum mechanics
Developing low‐cost, efficient, and stable dopant‐free hole‐transporting materials (HTMs) in perovskite solar cells (PVSCs) is essential to their commercial deployment. Herein, the synthesis of a novel spirofluorene‐dithiolane based small molecular HTM, SFDT‐TDM, through facile and low‐cost synthetic routes is reported. The CH … π interactions in adjacent SFDT‐TDM are beneficial for high hole mobility and the methylthio groups in SFDT‐TDM can serve as Lewis bases to passivate the defects on the surface of perovskite films, leading to suppressed non‐radiative recombination and enhanced charge extraction at the perovskite/HTM interface. As a result, Cs x FA 1− x PbI 3 based PVSCs with SFDT‐TDM as the HTM realize champion power conversion efficiencies (PCEs) of 21.7% and 20.3% for small‐area (0.04 cm 2 ) and large‐area (1.0 cm 2 ) devices with negligible photocurrent hysteresis, respectively. Additionally, all‐inorganic CsPbI 3− x Br x based PVSCs with SFDT‐TDM demonstrate an impressive PCE of 17.1% along with excellent stability. This work highlights the great potential of the spirofluorene core for exploring low‐cost and dopant‐free HTMs for PVSCs with high efficiency and stability.