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The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics
Author(s) -
Neumayer Sabine M.,
Tao Lei,
O'Hara Andrew,
Susner Michael A.,
McGuire Michael A.,
Maksymovych Petro,
Pantelides Sokrates T.,
Balke Nina
Publication year - 2020
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.202001726
Subject(s) - materials science , van der waals force , ferroelectricity , negative impedance converter , capacitance , polarization (electrochemistry) , electric field , condensed matter physics , piezoresponse force microscopy , optoelectronics , polarization density , voltage , nanotechnology , electrical engineering , physics , dielectric , magnetic field , chemistry , magnetization , electrode , quantum mechanics , molecule , voltage source , engineering
Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero‐polarization state or slowing down ferroelectric switching in order to access NC regimes of the free‐energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP 2 S 6 , a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezoresponse force microscopy, it is shown that an unusual combination of high Cu‐ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E, dP / dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC‐based devices. The nanoscale demonstration of this mechanism can be extended to the device‐level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.