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Quantum‐Dot Solar Cells: Suppressing Interfacial Dipoles to Minimize Open‐Circuit Voltage Loss in Quantum Dot Photovoltaics (Adv. Energy Mater. 48/2019)
Author(s) -
Lim Hunhee,
Kim Donghun,
Choi MinJae,
Sargent Edward H.,
Jung Yeon Sik,
Kim Jin Young
Publication year - 2019
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201970188
Subject(s) - quantum dot , materials science , open circuit voltage , photovoltaics , optoelectronics , solar cell , dipole , voltage , photovoltaic system , short circuit , bilayer , multiple exciton generation , nanotechnology , physics , electrical engineering , chemistry , quantum mechanics , membrane , engineering , biochemistry
Quantum‐dot solar cells have suffered from substantial losses of photovoltage. In article number 1901938, Yeon Sik Jung, Jin Young Kim and co‐workers develop and report a bilayer hole‐transport layer, which effectively suppresses undesired interfacial dipoles and electron leakage. The new method consequently enables a quantum‐dot solar cell with an open‐circuit‐voltage loss of 450 mV, one of the lowest values reported to date.