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Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators
Author(s) -
Zhang Zhi,
Jiang Dongdong,
Zhao Junqing,
Liu Guoxu,
Bu Tianzhao,
Zhang Chi,
Wang Zhong Lin
Publication year - 2020
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201903713
Subject(s) - triboelectric effect , nanogenerator , materials science , contact electrification , semiconductor , optoelectronics , direct current , rubbing , voltage , alternating current , electrical impedance , electrical engineering , nanotechnology , composite material , piezoelectricity , engineering
The triboelectric nanogenerator (TENG) is a new energy technology that is enabled by coupled contact electrification and electrostatic induction. The conventional TENGs are usually based on organic polymer insulator materials, which have the limitations and disadvantages of high impedance and alternating output current. Here, a tribovoltaic effect based metal–semiconductor direct‐current triboelectric nanogenerator (MSDC‐TENG) is reported. The tribovoltaic effect is facilitated by direct voltage and current by rubbing a metal/semiconductor on another semiconductor. The frictional energy released by the forming atomic bonds excites nonequilibrium carriers, which are directionally separated to form a current under the built‐in electric field. The continuous average open‐circuit voltage (10–20 mV), short‐circuit direct‐current output (10–20 µA), and low impedance characteristic (0.55–5 kΩ) of the MSDC‐TENG can be observed during relative sliding of the metal and silicon. The working parameters are systematically studied for electric output and impedance characteristics. The results reveal that faster velocity, larger pressure, and smaller area can improve the maximum power density. The internal resistance is mainly determined by the velocity and the electrical resistance of semiconductor. This work not only expands the material candidates of TENGs from organic polymers to semiconductors, but also demonstrates a tribovoltaic effect based electric energy conversion mechanism.