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Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage
Author(s) -
Li Zhipeng,
Wang Li,
Liu Ranran,
Fan Yingping,
Meng Hongguang,
Shao Zhipeng,
Cui Guanglei,
Pang Shuping
Publication year - 2019
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201902142
Subject(s) - materials science , perovskite (structure) , passivation , grain boundary , surface photovoltage , perovskite solar cell , layer (electronics) , ion , photovoltaic system , optoelectronics , tin , energy conversion efficiency , chemical engineering , nanotechnology , composite material , metallurgy , electrical engineering , chemistry , microstructure , physics , organic chemistry , quantum mechanics , spectroscopy , engineering
Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnO x ‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnO x ‐Cl/MAPbI 3 . The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.