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Cadmium Free Cu 2 ZnSnS 4 Solar Cells with 9.7% Efficiency
Author(s) -
Larsen Jes K.,
Larsson Fredrik,
Törndahl Tobias,
Saini Nishant,
Riekehr Lars,
Ren Yi,
Biswal Adyasha,
Hauschild Dirk,
Weinhardt Lothar,
Heske Clemens,
PlatzerBjörkman Charlotte
Publication year - 2019
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201900439
Subject(s) - czts , materials science , annealing (glass) , cadmium , optoelectronics , cadmium sulfide , buffer (optical fiber) , solar cell , open circuit voltage , thin film , layer (electronics) , valence band , kesterite , valence (chemistry) , band gap , analytical chemistry (journal) , voltage , nanotechnology , composite material , metallurgy , telecommunications , physics , quantum mechanics , computer science , chemistry , chromatography
Cu 2 ZnSnS 4 (CZTS) thin‐film solar cell absorbers with different bandgaps can be produced by parameter variation during thermal treatments. Here, the effects of varied annealing time in a sulfur atmosphere and an ordering treatment of the absorber are compared. Chemical changes in the surface due to ordering are examined, and a downshift of the valence band edge is observed. With the goal to obtain different band alignments, these CZTS absorbers are combined with Zn 1− x Sn x O y (ZTO) or CdS buffer layers to produce complete devices. A high open circuit voltage of 809 mV is obtained for an ordered CZTS absorber with CdS buffer layer, while a 9.7% device is obtained utilizing a Cd free ZTO buffer layer. The best performing devices are produced with a very rapid 1 min sulfurization, resulting in very small grains.