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Simple Bithiophene–Rhodanine‐Based Small Molecule Acceptor for Use in Additive‐Free Nonfullerene OPVs with Low Energy Loss of 0.51 eV
Author(s) -
Lee Taeho,
Eom Yoonho,
Song Chang Eun,
Jung In Hwan,
Kim Dongwook,
Lee Sang Kyu,
Shin Won Suk,
Lim Eunhee
Publication year - 2019
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201804021
Subject(s) - rhodanine , materials science , homo/lumo , acceptor , thiophene , organic solar cell , open circuit voltage , electron acceptor , band gap , optoelectronics , molecule , photochemistry , voltage , organic chemistry , chemistry , physics , quantum mechanics , composite material , condensed matter physics , polymer
Abstract The introduction of rigid and extended ladder‐type fused‐ring cores, such as indacenodithiophene, has enabled the synthesis of a variety of nonfullerene small molecules for use as electron acceptors in high‐performance organic photovoltaic cells. Contrasting with recent trends, a very simple‐structured nonfullerene acceptor (NFA), T2‐ORH , consisting of a bithiophene core and octyl‐substituted rhodanine ends, is synthesized in two steps from inexpensive commercially available raw materials. Its relatively short π‐conjugation results in a wide bandgap and a blue‐shifted UV–vis absorption profile complementary to those of poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene‐co‐3‐fluorothieno[3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th). Despite a sufficient offset between T2‐ORH and PTB7‐Th, the lowest unoccupied molecular orbital (LUMO) energy level of T2‐ORH is still higher than the LUMOs of other NFAs (e.g., ITIC). Therefore, the PTB7‐Th: T2‐ORH blend film exhibits an efficiency of 9.33% with a high open‐circuit voltage of 1.07 V and a short‐circuit current of 14.72 mA cm −2 in an additive‐free single‐junction cell. Importantly, the optimized device displays a remarkably low energy loss of 0.51 eV, in which bimolecular and monomolecular charge recombination is effectively suppressed by solvent vapor annealing treatment. The blend film has a very smooth and homogeneous morphology, providing both vertical and parallel charge transport in the devices.