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In Situ Grain Boundary Functionalization for Stable and Efficient Inorganic CsPbI 2 Br Perovskite Solar Cells
Author(s) -
Zeng Zhaobing,
Zhang Jing,
Gan Xinlei,
Sun Hongrui,
Shang Minghui,
Hou Dagang,
Lu Chaojie,
Chen Renjie,
Zhu Yuejin,
Han Liyuan
Publication year - 2018
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201801050
Subject(s) - materials science , grain boundary , passivation , nucleation , perovskite (structure) , surface modification , annealing (glass) , chemical engineering , grain growth , grain size , ionic bonding , phase (matter) , mineralogy , nanotechnology , composite material , ion , thermodynamics , microstructure , chemistry , organic chemistry , engineering , physics , layer (electronics)
The phase instability and large energy loss are two obstacles to achieve stable and efficient inorganic‐CsPbI 3− x Br x perovskite solar cells. In this work, stable cubic perovskite (α)‐phase CsPbI 2 Br is successfully achieved by Pb(Ac) 2 functioning at the grain boundary under low temperature. Ac − strongly coordinates with CsPbI 2 Br to stabilize the α‐phase and also make the grain size smaller and film uniform by fast nucleation. PbO is formed in situ at the grain boundary by decomposing Pb(Ac) 2 at high‐temperature annealing. The semiconducting PbO effectively passivates the surface states, reduces the interface recombination, and promotes the charge transport in CsPbI 2 Br perovskite solar cells. A 12% efficiency and good stability are obtained for in situ PbO‐passivated CsPbI 2 Br solar cells, while Pb(Ac) 2 ‐passivated device exhibits 8.7% performance and the highest stability, much better than the control device with 8.5% performance and inferior stability. This article highlights the extrinsic ionic grain boundary functionalization to achieve stable and efficient inorganic CsPbI 3− x Br x materials and the devices.