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Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics
Author(s) -
Palmstrom Axel F.,
Raiford James A.,
Prasanna Rohit,
Bush Kevin A.,
Sponseller Melany,
Cheacharoen Rongrong,
Minichetti Maxmillian C.,
Bergsman David S.,
Leijtens Tomas,
Wang HsinPing,
Bulović Vladimir,
McGehee Michael D.,
Bent Stacey F.
Publication year - 2018
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201800591
Subject(s) - perovskite (structure) , atomic layer deposition , tin , materials science , tin oxide , halide , photovoltaics , formamidinium , oxide , chemical engineering , inorganic chemistry , nanotechnology , thin film , chemistry , metallurgy , photovoltaic system , ecology , engineering , biology
Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top‐cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite‐compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA 0.83 Cs 0.17 Pb(I 0.83 Br 0.17 ) 3 perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed‐chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene‐free device performance. This method is demonstrated with a bromine‐rich perovskite phase to enable an 8.2% efficient perovskite device with all‐inorganic extraction layers.