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Carbon Nitride/Reduced Graphene Oxide Film with Enhanced Electron Diffusion Length: An Efficient Photo‐Electrochemical Cell for Hydrogen Generation
Author(s) -
Peng Guiming,
Volokh Michael,
Tzadikov Jonathan,
Sun Jingwen,
Shalom Menny
Publication year - 2018
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201800566
Subject(s) - materials science , photocurrent , graphene , electrochemistry , carbon nitride , water splitting , graphitic carbon nitride , reversible hydrogen electrode , oxide , hydrogen production , chemical engineering , nanotechnology , hydrogen , electrode , optoelectronics , photocatalysis , working electrode , catalysis , chemistry , organic chemistry , engineering , metallurgy
Polymeric carbon nitride (CN) has emerged as a promising semiconductor for energy‐related applications. However, its utilization in photo‐electrochemical cells is still very limited owing to poor electron–hole separation efficiency, short electron diffusion length, and low absorption coefficient. Here the synthesis of a highly porous carbon nitride/reduced graphene oxide (CN‐rGO) film with good photo‐electrochemical properties is reported. The CN‐rGO film exhibits long electron diffusion length and high electrochemical active surface area, good charge separation, and enhanced light‐harvesting properties. The film displays a 20‐fold enhancement of photocurrent density over pristine CN, reaching up to 75 µA cm −2 at 1.23 V versus reversible hydrogen electrode (RHE) in an alkaline solution, as well as stability over a wide pH range. Photocurrent measurements with a hole scavenger reveal a photocurrent density of 660 µA cm −2 at 1.23 V versus RHE and a quantum efficiency of 60% at 400 nm, resulting in the production of 0.8 mol h −1 g −1 of hydrogen. The substantial photo‐electrochemical activity enhancement and hydrogen production together with the low price, high electrochemical surface area, long electron diffusion length, stability under harsh condition, and tunable photophysical properties of CN materials open many possibilities for their utilization in (photo)electrochemical and electronic devices.