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µ‐Graphene Crosslinked CsPbI 3 Quantum Dots for High Efficiency Solar Cells with Much Improved Stability
Author(s) -
Wang Qian,
Jin Zhiwen,
Chen Da,
Bai Dongliang,
Bian Hui,
Sun Jie,
Zhu Ge,
Wang Gang,
Liu Shengzhong Frank
Publication year - 2018
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201800007
Subject(s) - materials science , graphene , solar cell , quantum dot , energy conversion efficiency , thermal stability , perovskite (structure) , chemical engineering , nanotechnology , degradation (telecommunications) , photovoltaic system , phase (matter) , perovskite solar cell , optoelectronics , electrical engineering , organic chemistry , engineering , chemistry
All‐inorganic perovskite CsPbI 3 quantum dots (QDs) offer much better stability for photovoltaic applications. Unfortunately, their cell efficiencies are hindered by the low carrier transport efficiency of QD‐assembled films. In addition, agglomeration‐induced phase change of QDs poses another problem for material and device degradation. Herein, the use of µ‐graphene (µGR) to crosslink QDs to form µGR/CsPbI 3 film is demonstrated. It is found that the resultant QDs film provides not only an effective channel for carrier transport, as witnessed by much improved conductivity but also significantly better stability against moisture, humidity, and high temperature stresses. The µGR/CsPbI 3 based solar cell shows increased device performance. More specifically, compared to the solar cell without the µGR treatment, V OC is improved to 1.18 from 1.16 V, J SC to 13.59 from 13.17 mA cm −2 , and FF to 72.6 from 68.1%, and overall power conversion efficiency to as high as 11.40 from 10.41%, a 12% increase. In addition, the instability originating from the thermal/moisture‐induced QD agglomeration is also greatly suppressed by the µGR crosslinking. The optimized device retains >98% of its initial efficiency after being stored in N 2 atmosphere for one month. Importantly, under 60% humidity and 100 °C thermal stresses, the µGR/CsPbI 3 devices show much better stability.