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Understanding the Doping Effect on NiO: Toward High‐Performance Inverted Perovskite Solar Cells
Author(s) -
Chen Wei,
Wu Yinghui,
Fan Jing,
Djurišić Aleksandra B.,
Liu Fangzhou,
Tam Ho Won,
Ng Annie,
Surya Charles,
Chan Wai Kin,
Wang Dong,
He ZhuBing
Publication year - 2018
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201703519
Subject(s) - materials science , non blocking i/o , nickel oxide , doping , perovskite (structure) , work function , acceptor , conductivity , energy conversion efficiency , band gap , charge carrier , nickel , optoelectronics , chemical engineering , condensed matter physics , nanotechnology , metallurgy , catalysis , chemistry , layer (electronics) , biochemistry , engineering , physics
High‐quality hole transport layers are prepared by spin‐coating copper doped nickel oxide (Cu:NiO) nanoparticle inks at room temperature without further processing. In agreement with theoretical calculations predicting that Cu doping results in acceptor energy levels closer to the valence band maximum compared to gap states of nickel vacancies in undoped NiO, an increase in the conductivity in Cu:NiO films compared to NiO is observed. Cu in Cu:NiO can be found in both Cu + and Cu 2+ states, and the substitution of Ni 2+ with Cu + contributes to both increased carrier concentration and carrier mobility. In addition, the films exhibit increased work function, which together with the conductivity increase, enables improved charge transfer and extraction. Furthermore, recombination losses due to lower monomolecular Shockley‐Read‐Hall recombination are reduced. These factors result in an improvement of all photovoltaic performance parameters and consequently an increased efficiency of the inverted planar perovskite solar cells. A power conversion efficiency (PCE) exceeding 20% could be achieved for small‐area devices, while PCE values of 17.41 and 18.07% are obtained for flexible devices and large area (1 cm 2 ) devices on rigid substrates, respectively.