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Anomalous Charge‐Extraction Behavior for Graphene‐Oxide (GO) and Reduced Graphene‐Oxide (rGO) Films as Efficient p‐Contact Layers for High‐Performance Perovskite Solar Cells
Author(s) -
Jokar Efat,
Huang Zhong Yi,
Narra Sudhakar,
Wang ChiYung,
Kattoor Vidya,
Chung ChihChun,
Diau Eric WeiGuang
Publication year - 2018
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201701640
Subject(s) - graphene , materials science , perovskite (structure) , oxide , heterojunction , indium tin oxide , optoelectronics , indium , charge carrier , substrate (aquarium) , doping , nanotechnology , chemical engineering , thin film , engineering , metallurgy , oceanography , geology
Reduced graphene oxides (rGO) are synthesized via reduction of GO with reducing agents as a hole‐extraction layer for high‐performance inverted planar heterojunction perovskite solar cells. The best efficiencies of power conversion (PCE) of these rGO cells exceed 16%, much greater than those made of GO and poly(3,4‐ethenedioxythiophene):poly(styrenesulfonate) films. A flexible rGO device shows PCE 13.8% and maintains 70% of its initial performance over 150 bending cycles. It is found that the hole‐extraction period is much smaller for the GO/methylammonium lead‐iodide perovskite (PSK) film than for the other rGO/PSK films, which contradicts their device performances. Photoluminescence and transient photoelectric decays are measured and control experiments are performed to prove that the reduction of the oxygen‐containing groups in GO significantly decreases the ability of hole extraction from PSK to rGO and also retards the charge recombination at the rGO/PSK interface. When the hole injection from PSK to GO occurs rapidly, hole propagation from GO to the indium‐doped tin oxide (ITO) substrate becomes a bottleneck to overcome, which leads to a rapid charge recombination that decreases the performance of the GO device relative to the rGO device.