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Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu 2 BaSnS 4 Thin‐Film Solar Cells
Author(s) -
Ge Jie,
Koirala Prakash,
Grice Corey R.,
Roland Paul J.,
Yu Yue,
Tan Xinxuan,
Ellingson Randy J.,
Collins Robert W.,
Yan Yanfa
Publication year - 2017
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201601803
Subject(s) - materials science , open circuit voltage , tandem , optoelectronics , doping , energy conversion efficiency , solar cell , diode , thin film , band gap , absorption (acoustics) , buffer (optical fiber) , voltage , nanotechnology , electrical engineering , composite material , engineering
Earth‐abundant Cu 2 BaSnS 4 (CBTS) thin films exhibit a wide bandgap of 2.04–2.07 eV, a high absorption coefficient > 10 4 cm −1 , and a p‐type conductivity, suitable as a top‐cell absorber in tandem solar cell devices. In this work, sputtered oxygenated CdS (CdS:O) buffer layers are demonstrated to create a good p–n diode with CBTS and enable high open‐circuit voltages of 0.9–1.1 V by minimizing interface recombination. The best power conversion efficiency of 2.03% is reached under AM 1.5G illumination based on the configuration of fluorine‐doped SnO 2 (back contact)/CBTS/CdS:O/CdS/ZnO/aluminum‐doped ZnO (front contact).