Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu 2 BaSnS 4  Thin‐Film Solar Cells | Zendy

Ge Jie | Zendy; Koirala Prakash | Zendy; Grice Corey R. | Zendy; Roland Paul J. | Zendy; Yu Yue | Zendy; Tan Xinxuan | Zendy; Ellingson Randy J. | Zendy; Collins Robert W. | Zendy; Yan Yanfa | Zendy

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Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu 2 BaSnS 4 Thin‐Film Solar Cells

Author(s) -

Ge Jie,

Koirala Prakash,

Grice Corey R.,

Roland Paul J.,

Yu Yue,

Tan Xinxuan,

Ellingson Randy J.,

Collins Robert W.,

Yan Yanfa

Publication year - 2017

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201601803

Subject(s) - materials science , open circuit voltage , tandem , optoelectronics , doping , energy conversion efficiency , solar cell , diode , thin film , band gap , absorption (acoustics) , buffer (optical fiber) , voltage , nanotechnology , electrical engineering , composite material , engineering

Earth‐abundant Cu 2 BaSnS 4 (CBTS) thin films exhibit a wide bandgap of 2.04–2.07 eV, a high absorption coefficient > 10 4 cm −1 , and a p‐type conductivity, suitable as a top‐cell absorber in tandem solar cell devices. In this work, sputtered oxygenated CdS (CdS:O) buffer layers are demonstrated to create a good p–n diode with CBTS and enable high open‐circuit voltages of 0.9–1.1 V by minimizing interface recombination. The best power conversion efficiency of 2.03% is reached under AM 1.5G illumination based on the configuration of fluorine‐doped SnO 2 (back contact)/CBTS/CdS:O/CdS/ZnO/aluminum‐doped ZnO (front contact).

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