Premium
Engineering Processes at the Interface of p‐Semiconductor for Enhancing the Open Circuit Voltage in p‐Type Dye‐Sensitized Solar Cells
Author(s) -
Favereau Ludovic,
Pellegrin Yann,
Hirsch Lionel,
Renaud Adèle,
Planchat Aurélien,
Blart Errol,
Louarn Guy,
Cario Laurent,
Jobic Stéphane,
Boujtita Mohammed,
Odobel Fabrice
Publication year - 2017
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201601776
Subject(s) - dye sensitized solar cell , open circuit voltage , electrolyte , non blocking i/o , passivation , dielectric spectroscopy , semiconductor , materials science , redox , electrochemistry , chemistry , optoelectronics , chemical engineering , layer (electronics) , inorganic chemistry , nanotechnology , voltage , electrode , organic chemistry , electrical engineering , engineering , catalysis
To prevent the interfacial charge recombination between injected holes in the valence band and the redox mediator in the electrolyte in p‐type dye sensitized solar cells (p‐DSSC) the passivation of the recombination sites by organic insulator chenodeoxycholic acid (CDCA) layer is critically investigated in this study. Rather than classical coating of the semiconductor's surface by simultaneous co‐adsorption of CDCA during the dyeing step, two other methods are investigated. The first consists in dissolving CDCA in the electrolyte, while the second consists in spin coating an ethanol solution of CDCA onto the already dyed photocathode. In this study, different sensitizers, electrolytes, and p‐SCs, (NiO, CuGaO 2 ) are explored. Analysis of the current/voltage curves and electrochemical impedance spectroscopy provides evidence that the role of the CDCA layer is to create a physical barrier to prevent the approach of the redox mediator from the NiO surface and consequently raise the open circuit voltage ( V oc ). The important finding of this study is the demonstration that the V oc in p‐DSSC is heavily limited by interfacial charge recombination and that higher V oc values much above 100 mV and as high as 500 mV can be attained with conventional materials (NiO) if this deleterious side reaction can be suppressed or diminished.