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Efficient Indium‐Doped TiO x Electron Transport Layers for High‐Performance Perovskite Solar Cells and Perovskite‐Silicon Tandems
Author(s) -
Peng Jun,
Duong The,
Zhou Xianzhong,
Shen Heping,
Wu Yiliang,
Mulmudi Hemant Kumar,
Wan Yimao,
Zhong Dingyong,
Li Juntao,
Tsuzuki Takuya,
Weber Klaus J.,
Catchpole Kylie R.,
White Thomas P.
Publication year - 2017
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201601768
Subject(s) - perovskite (structure) , materials science , doping , indium , perovskite solar cell , silicon , indium tin oxide , optoelectronics , energy conversion efficiency , layer (electronics) , analytical chemistry (journal) , nanotechnology , chemical engineering , chemistry , chromatography , engineering
In addition to a good perovskite light absorbing layer, the hole and electron transport layers play a crucial role in achieving high‐efficiency perovskite solar cells. Here, a simple, one‐step, solution‐based method is introduced for fabricating high quality indium‐doped titanium oxide electron transport layers. It is shown that indium‐doping improves both the conductivity of the transport layer and the band alignment at the ETL/perovskite interface compared to pure TiO 2 , boosting the fill‐factor and voltage of perovskite cells. Using the optimized transport layers, a high steady‐state efficiency of 17.9% for CH 3 NH 3 PbI 3 ‐based cells and 19.3% for Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) 3 ‐based cells is demonstrated, corresponding to absolute efficiency gains of 4.4% and 1.2% respectively compared to TiO 2 ‐based control cells. In addition, a steady‐state efficiency of 16.6% for a semi‐transparent cell is reported and it is used to achieve a four‐terminal perovskite‐silicon tandem cell with a steady‐state efficiency of 24.5%.